| 摘要 |
PURPOSE:To process resists effectively by a method wherein a semiconductor wafer is heated by radiant light emitted from a lamp while the wafer is vacuum- adsorbed on a processing stage to control the heating speed of semiconductor wafer. CONSTITUTION:A semiconductor wafer 5 whereon patterns of resists 4 are formed is loaded upon a wafer processing stage 6. Next, the wafer 5 is stuck to the processing stage 6 by vacuumizing vacuum adsorbing holes 7. A shutter 3 is opened while the wafer 5 is stuck to the processing stage 6 to irradiate the resists 4 with radiant light emitted from a high pressure mercury arc lamp 1. At this time, the temperature of semiconductor wafer 5 stuck to the processing stage 6 is controlled by either heating the stage 6 with a heater 10 or cooling it by flowing cooling water into cooling holes 11. Finally, the shutter 3 is closed to stop irradiation to release the semiconductor wafer 5 from the vacuum adsorption. |
