| 摘要 |
PURPOSE:To prevent short circuits between wirings due to lateral projections of Al wirings, whose upper parts undergo anodic oxidation, by forming Al films on a substrate, patterning only a narrow wiring pattern, whose interval is less than a specified value, then performing the anodic oxidation, and thereafter patterning a remaining wiring pattern. CONSTITUTION:On a substrate or an insulating film, Al is formed to a desired film thickness. A narrow pattern, whose interval is less than 1.0mum, is patterned. The wiring pattern is determined beforehand. Resist, which is patterned so that only the pattern having the narrow interval is etched, is used as a mask. In this way, Al films are etched. Thereafter, AO films 12 are formed not only on the surface of the Al films, which are shown by dots, but on the side parts of the narrow pattern shown by thick lines by anodic oxidation. Then a remaining pattern is patterned. At this time, since the Al is exposed at the side part, the pattern interval is large, and lateral projections are not contacted even if said projections is formed.
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