发明名称 SEMICONDUCTOR DEVICE HAVING OVERVOLTAGE PROTECTING FUNCTION
摘要 PURPOSE:To protect elements from overvoltages sufficiently and to prevent erroneous ignition even if noise currents enter, by providing a gate lead-out structure, and imparting an overvoltage protecting function, which is controlled by an external electric signal. CONSTITUTION:An avalanche current is generated at a specified limited place and controlled to a minute avalanche current so as not to cause element breakdown due to overheat. Said avalanche current acts as a gate current for a first-stage pilot thyristor 21a. The pilot thyristor 21a is turned ON, and a second-stage pilot thyristor 21b and a main thyristor 21m are also immediately turned ON. In this structure, a curved-in part 28 is provided at the central part of a substrate, where the junction of an N<-> base layer and P-base layer is present. The gate sensitivity of the first-stage pilot thyristor is made high just like a pilot thyristor for an optical thyristor. In this way, the avalanche current, which is generated when a forward overvoltage is applied, is utilized as the gate current, and a thyristor with an overvoltage protecting function 21 is safely turned ON, and the overvoltage protecting function is provided.
申请公布号 JPS62160764(A) 申请公布日期 1987.07.16
申请号 JP19860002299 申请日期 1986.01.10
申请人 TOSHIBA CORP 发明人 MATSUDA HIDEO;TSUNODA YOSHIAKI
分类号 H01L29/74 主分类号 H01L29/74
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