| 摘要 |
PURPOSE:To realize alignment of high accuracy, by forming alignment marks on the back side of a wafer which is not affected by a process or a resist, and performing the alignment using the marks. CONSTITUTION:A reticle R is set on a reticle holder 1, and a wafer W on the back surface of which a resist layer is formed is set on a glass plate 5. After the alignment of the reticle R to an apparatus, a pattern on the reticle is exposed on the wafer W. Then marks Wtheta, WX and WY are formed on the back surface of the wafer W by means of development. The wafer W is adsorbed with vacuum on the glass plate 5 in the manner in which the back side faces a stage side. After performing a global alignment to the wafer W, the alignment between the wafer W and the apparatus is performed using the marks Wtheta1, WX1 and WY1. Further, light irradiation is performed on the back side of the wafer W through an objective optical system 17 with a light source 18 and a half mirror 19. |
