| 摘要 |
PURPOSE:To obtain a material for the lower layer material of the resist capable of forming a polymer film good in absorptivity to exposure light and light transmittance in the wavelength region near 515nm necessary for matching a mask by using as a main component a novolak resin obtained by condensing cresol alone or in combination with phenol. CONSTITUTION:The photoresist composition for the lower layer material of the resist contains as the main component the novolak resin obtained by condensing cresol or cresol and phenol, and this resin needs to be able to be formed into a film after removal of a solvent, and it has, preferably, a number average molecular weight of >=1,000. The surface of a substrate made of silicon, aluminum, quartz, glass, or the like is coated with said resin in a state of being dissolved in a solvent, and heated to a temperature of 200-250 deg.C, thus permitting the obtained polymer film to well absorb the exposure light of 436nm, 405nm, and 365nm wavelengths, and the selectively transmit the light near 515nm wavelength, and consequently, to be adequate for the lower layer material of the resist in the semiconductor manufacturing industry. |
