| 摘要 |
PURPOSE:To form a monocrystalline semiconductor layer of improved crystal quality by growing a monocrystalline silicon carbide layer on a monocrystalline semiconductor substrate, depositing thereon a non-monocrystalline semiconductor layer, and beam annealing it. CONSTITUTION:A monocrystalline silicon carbide layer 22 is epitaxially grown on a silicon substrate 21 by the CVD method. Whereupon, the layer 22 along the crystal orientation of the substrate 21 is grown. Then, a polycrystalline silicon film 23 is deposited thereon by the CVD method. Then, the film 23 is beam annealed, changing to a monocrystalline silicon film 23. Whereupon, the film along the crystal orientation of the layer 22 is grown.
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