| 摘要 |
PURPOSE:To improve P/I interface characteristics and to increase a photoelectric conversion efficiency by providing two kinds of repeated layers consisting of main components of the layers on both sides at least either between a P-type layer and an I-type layer or between an N-type layer and an I-type layer. CONSTITUTION:A conductive transmitting film 12 is formed on a glass substrate 11 and a P-type SiC:H film 13 is formed on that film by high-frequency plasma decomposition technique. Further, a buffer layer 14 is formed, which is of a multi-layer thin film structure in which a-SiC:H layers 21, 23, 25, 27, and 29 and a-Si:H layer 22, 24, 26, 28 and 30 are formed alternately. On this layer, an I-type a-Si:H film 15 and an N-type fine crystal Si film 16 are formed in order and an Ag electrode 14 is evaporated lastly. Thus, P/I interface characteristics can be improved and a photoelectric conversion efficiency is increased. |
