发明名称 METHOD AND APPARATUS FOR ALIGNING MASK WITH WAFER IN EXPOSURE OF SEMICONDUCTOR WAFER
摘要 PURPOSE:To shorten an aligning time without decreasing an alignment accuracy by scanning an alignment mark by a longitudinally long sheetlike beam, and then scanning the mark by a longitudinally short sheetlike beam. CONSTITUTION:A sheetlike beam 6 is lengthened longitudinally to scan an alignment mark 1 in first step, and a rough alignment is completed within a predetermined tolerance. Then, the longitudinal length of the beam 6 is shortened, the mark 1 is scanned by a luminous flux having high intensity, and a fine alignment is completed in a predetermined tolerance. Thus, the alignment time can be shortened without decreasing an alignment accuracy.
申请公布号 JPS62159428(A) 申请公布日期 1987.07.15
申请号 JP19860000667 申请日期 1986.01.08
申请人 CANON INC 发明人 SAKAI FUMIO
分类号 G03F9/00;H01L21/027;H01L21/30;H01L21/67;H01L21/68 主分类号 G03F9/00
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