发明名称 |
Method for forming deposited film. |
摘要 |
<p>A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.</p> |
申请公布号 |
EP0228870(A2) |
申请公布日期 |
1987.07.15 |
申请号 |
EP19860309871 |
申请日期 |
1986.12.17 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAITOH, KEISHI;HIROOKA, MASAAKI;HANNA, JUNICHI;SHIMIZU, ISAMU |
分类号 |
H01L31/04;C23C16/30;C23C16/44;C23C16/452;C23C16/48;C23C16/50;G03G5/08;G03G5/082;H01L21/205;H01L31/02;H01L31/075;H01L31/18;H01L31/20;(IPC1-7):H01L21/205 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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