发明名称 Method for forming deposited film.
摘要 <p>A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.</p>
申请公布号 EP0228870(A2) 申请公布日期 1987.07.15
申请号 EP19860309871 申请日期 1986.12.17
申请人 CANON KABUSHIKI KAISHA 发明人 SAITOH, KEISHI;HIROOKA, MASAAKI;HANNA, JUNICHI;SHIMIZU, ISAMU
分类号 H01L31/04;C23C16/30;C23C16/44;C23C16/452;C23C16/48;C23C16/50;G03G5/08;G03G5/082;H01L21/205;H01L31/02;H01L31/075;H01L31/18;H01L31/20;(IPC1-7):H01L21/205 主分类号 H01L31/04
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