| 摘要 |
PURPOSE:To attain the low cost and to facilitate monolithic forming by utilizing high frequency oscillation of a dual gate field effect transistor (TR) and mixer characteristic. CONSTITUTION:The dual gate field effect TR is subjected to self-oscillation at the fundamental wave by selecting an impedance viewing the load from the drain terminal D and viewing feedback circuits a3, b, a1, a2. Since a band limit filter (b) is connected in the feedback circuit and an output side circuit, frequencies being n-time (n=1, 2, 3...) of the fundamental frequency are extracted. Since a reception signal is inputted to a gate terminal G2, its reception signal and the harmonic signal having a frequency being n-time are superimposed in the dual gate field effect TR, and the frequency signal being the sum and subtraction between the harmonic signal and the reception signal is generated in the output circuit connected to the drain.
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