| 摘要 |
PURPOSE:To obtain a semiconductor device having high reliability even at high temperature and high moisture by covering a semiconductor element and leads with a resin composition which contains acetylene group end polyimide resin. CONSTITUTION:After an SiO2 insulating layer, a polysilicon layer, and further first aluminum wirings (4-I) are formed on an Si element substrate, acetylene group end polyimide polymer is dissolved in a toluene, a coating material adjusted from 1wt% resin solution is covered and baked (3-I), a positive resist is then coated, and sulfone patterned. Then, a plasma etching with CF4-O2 as a reaction gas is executed. Thereafter, the positive resist is removed by a plasma asher with O2 as a reaction gas. Then, after second layer aluminum wirings (4-II) is formed, and the resin solution is further coated and baked.
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