| 摘要 |
<p>A metal-semiconductor-metal photodiode comprises a semiconductor layer (12) and a cathode electrode (14) and an anode electrode (15) which are formed on the semi- conductor layer and are made of such mutually different electrode materials that the cathode electrode has a Schottky barrier height Øbn from a conduction band satisfying Øbn > Eg/2 and the anode electrode has a schottky barrier height Øbp from a valence band satisfying Øbp> Eg/2, where Eg denotes an energy band gap.</p> |
