| 摘要 |
PURPOSE:To readily calculate a source resistance by recognizing MOS transistors connected in parallel by the connecting relation of elements, and then applying a source resistance calculating model to divided diffused layers. CONSTITUTION:Layout information of diffused layers of MOS transistors is provided as attribute parameters of the transistors. The connecting relation of a plurality of MOS transistors is extracted without source resistance in such a manner that the sources and drains are connected respectively with each other. After the plurality of MOS transistors are integrated, the source resistances of the integrated transistors are calculated by referring to the layout information of the diffused layers. Thus, the source resistance can be readily calculated.
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