发明名称 MANUFACTURE OF MULTILAYER INTERCONNECTION STRUCTURE
摘要 PURPOSE:To improve the reliability of interconnection by substantially completely flattening the stepwise difference of a lower interconnection layer by means of an interlayer insulating layer to eliminate the difference due to multilayer interconnections. CONSTITUTION:A substrate 1 having a patterned interconnection layer 2 is covered with a solution of a polyamic acid ester oligomer obtained by reacting aromatic tetracarboxylic acid ester obtained by reacting aromatic tetracarboxylic acid bianhydride and alcohol and/or alcohol derivative with aromatic diamine and/or diaminosiloxane. The solution is cured to form an interlayer insulating film 5, and a throughhole is formed. Thereafter, an upper interconnection layer 4 is formed on the film 5. Thus, a stepwise difference due to multilayer interconnections is eliminated to improve the reliability of interconnections.
申请公布号 JPS62159449(A) 申请公布日期 1987.07.15
申请号 JP19860001129 申请日期 1986.01.07
申请人 HITACHI CHEM CO LTD 发明人 UCHIMURA SHUNICHIRO;SUZUKI HIROSHI;SATO TONOBU
分类号 H01L21/768;G03F7/09;H01B3/30;H01L21/31;H01L21/312;H01L21/3205;H01L21/48;H01L23/522;H05K1/00;H05K1/03 主分类号 H01L21/768
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