| 摘要 |
PURPOSE:To enable a thin film of monocrystalline silicon or the like to grow at a high speed by applying light of the ultraviolet-vacuum ultraviolet region to disilane to generate disilane ions or silane ions, and introducing the ions onto a substrate. CONSTITUTION:After evacuating a vapor growth chamber 108 to vacuum, a silicon wafer 109 is heated to 500 deg.C, and simultaneously disilane is introduced through a introducing nozzle 107. A radiated light 101 from the storage ring is made to be incident upon the silicon wafer 109 surface from the horizontal direction through a pre-positioned mirror 102, a spectroscope 104, and a post- positioned mirror 106. When light is applied, a polycrystal of silicon is grown which has a thickness 1.5-2 times as compared with the case where light is not applied.
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