| 摘要 |
PURPOSE:To obtain a silicon germanium mixed crystal layer having a sufficient thickness and a fully planar surface by repeatedly and alternately growing silicon germanium mixed crystal layers and silicon layers. CONSTITUTION:A silicon atomic beam 40 and a germanium atomic beam 50 are applied to a silicon substrate in high vacuum, thereby growing a monocrystalline silicon germanium mixed crystal layer 20. Then, only the atomic beam 40 is applied to grow a monocrystalline silicon layer 30. Then, silicon germanium mixed crystal layers and silicon layers are repeatedly and alternately grown until a require thickness is reached.
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