Semiconductor non-volatile memory.

摘要

A semiconductor non-volatile memory comprises a semiconductor substrate (1) of a first conductivity type, source and drain regions (2,3) of a second conductivity type formed on a surface of the semiconductor substrate in such a manner as to be spaced apart from each other and a floating gate electrode (5) formed on the surface of a portion of the semiconductor substrate between the source and drain regions through a gate insulator film (4). An erasing electrode (8) is provided in opposing relation to the floating gate electrode through a first tunnel insulator film (7). A writing electrode (10) is provided in opposing relation to the floating gate electrode through a second tunnel insulator film (9).