发明名称 Field-effect transistor amplifier.
摘要 <p>A transconductance circuit (10) has its signal input terminals (22,28) at the gates of a pairs of MOSFETS (16,22; 32,38) which are forced to operate in the triode mode. The outputs of the triode mode MOSFET pair are fed to a cascode transistor (18,20; 34,36) for treatment as a differential signal. The differential output (28; 40) of the cascode transistors is highly linear with respect to the input signal at the gates of the triode mode transistors. Bias voltages for the gates of the cascode transistors are generated by a bias network (14). The transconductance circuit 12 includes a cross-coupled set of compensation capacitors (62, 64; 66, 68) formed from devices with the same geometries as the triode mode transistors to compensate for high frequency loss due to the Miller effect in the input transistors.</p>
申请公布号 EP0228843(A2) 申请公布日期 1987.07.15
申请号 EP19860309640 申请日期 1986.12.10
申请人 AT&T CORP. 发明人 SAARI, VEIKKO REYNOLD
分类号 H03F3/345;H03F3/26;H03F3/34;H03F3/347;H03F3/45;(IPC1-7):H03F1/22;H03F3/30 主分类号 H03F3/345
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