| 摘要 |
PURPOSE:To contrive the alleviation of strain and the increase of the limit of solid solution and then inprove the efficiency of the solar battery by realization of a P-layer having a low resistivity by a method wherein at least boron, hydrogen, and germanium are added to a P type Si layer. CONSTITUTION:Boron is introduced by ion implantation as shown by arrows 4 from the side of one main surface 2 of the mirror-formed main surfaces 2 and 3 of an N type single crystal Si substrate 1. Next, germanium is introduced by ion implantation as shown by the arrows 4 from the side of the same main surface 2 of the substrate 1, where the germanium is introduced by the setting of the implantation energy so as to cover the distribution of boron after going through the annealing process the next process. Then, a P type layer 5 is formed by the annealing for the electric activation of boron through a normal heat treatment, resulting in the formation of the P-N junction. finally, an ohmic clear electrode 6 is adhered to the layer 5, and an ohmic electrode 7 is adhered to the N type layer 1, thus completing the solar battery. |
