| 摘要 |
<p>13 Two (polycrystalline) silicon tracks (7, 8) located at a relative distance of the order of submicrons which contact the subjacent semiconductor body (1) with a pn junction formed therein, are connected to each other via a metal silicide track (21). The resulting shortcircuiting of the pn junction does not influence the operation of the circuit, for example, a memory cell, realized in the semiconductor body. By providing beforehand the whole conductor pattern with an oxide layer (10) in which a contact hole (39) is formed at the area of the shortcircuit where the metal silicide track is to be provided, the shortcircuit can be obtained in a selfaligning manner.</p> |
