| 摘要 |
PURPOSE:To increase the speed of response in a high-speed wide band by forming a current blocking layer consisting of the semiconductor layers of specific two layers into a striped groove. CONSTITUTION:A P-InP clad layer 10, an InGaAsP active layer 11, an N-InP clad layer 12 and an N-InGaP cap layer 13 are shaped on a P-InP semiconductor substrate B in succession, and an insulating film 14 is formed. A resist mask is shaped on the insulating film 14, the insulating film 14 and the semiconductor layers 13-10 are etched through selective etching to form two parallel striped grooves in width of 100mum or less, and an inverted trapezoid semiconductor is left at the center of both striped grooves. P-InP current blocking layers 15, N-InP current blocking layers 16 and N-InGaAs cap layers 17 are shaped in the striped grooves. Carrier concentration in either one of the current blocking layers 15, 16 is brought to 2X10<16>cm<-3> or less at that time. Only the insulating film 14 in the surface of the inverted trapezoidal semiconductor layer is removed, and electrodes 18, 19 are formed. |
