| 摘要 |
PURPOSE:To efficiently and easily form ultramicro single crystal particles of a high melting point metal by heating the metal to evaporate in a gaseous mixture composed of oxygen and inert gas to form ultramicro oxide particles and subjecting the particles to hydrogen reduction in a gaseous phase. CONSTITUTION:After the inside of an evaporation chamber 1 is evacuated by a diffusion pump 2, the oxygen and He or Ar are introduced from cylinders 4 via valves 5 into the chamber. A prescribed voltage is impressed to an evaporating source 11 fixed via lead wires 8 and conductive posts 9 to a conductive vapor source supporting base 10 to execute evaporation by resistance heating. The high melting point metal such as Mo or W is used for the evaporating source 11. The formed ultramicro oxide particles are captured by a capturing plate 14 cooled with liquid nitrogen 13. Such ultramicro particles are placed on a tray 19 and are housed through a taking in and out port 18 into a hermetic vessel 15 where hydrogen and nitrogen are introduced from cylinders 21 via valves 22 and the hydrogen reduction in the gaseous phase is executed. The ultramicro single crystal particles of the high melting point metal are thereby easily formed.
|
