| 摘要 |
PURPOSE:To obtain a planar type thyristor easily through processes, from which a photoetching process and a diffusion process are omitted, by forming an anode-emitter junction through a substrate joining technique. CONSTITUTION:A surface, on which specular working is executed, in an N-type semiconductor substrate 20 is coated with a resist film 22a while the back side is coated with a resist film 22b having a predetermined shape, and boron is introduced, using the substrate 20 as a mask, thus shaping P-type isolation layers 23. The resist films 22a, 22b are removed and a resist film 22c is shaped on the back side, the ground surface 25 of a P-type semiconductor substrate 21 is thermocompression-bonded with a ground surface 24, and an anode-emitter layer 26 connected to the isolation layers 23 is formed through heat treatment. The resist film 22c is patterned in a predetermined manner, and boron is introduced, employing the film 22c as a mask to shape a base layer 28 having a reverse conduction type. Phosphorus is introduced into the base layer 28 to form an emitter layer 29 having the same conduction type as the N-type semiconductor substrate 20 while a channel stopper 31 is shaped. |
