| 摘要 |
PURPOSE:To realize a process of photo-etching with effect in a low temperature process, by irradiating a photo-excitable etched object with pulsed laser light which is much smaller in pulse width than a collision time constant of an active core gas under gaseous pressure in the system to the etched object surface. CONSTITUTION:A reaction chamber 20 is filled with an active core gas for etching, and the active core is absorbed in high density on a surface of an etched object 18 located inside the reaction chamber. And, in a state in which the active core is absorbed on the etched object, pulsed laser light 16, which is much smaller in pulse width than a collision time constant of the gas under gaseous pressure in the system to the etched object surface, is radiated. Thus, because a non-thermal chemical reaction of photo-excitation is promoted between the active core and the etched object, photo etching can be performed with high etching efficiency.
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