| 摘要 |
PURPOSE:To obtain an internal stripe type semiconductor laser element with a current constriction channel section in uniform channel width by mutually forming the oppositely faced side surfaces of the current constriction channel section in parallel to a vertical shape to a foundation surface. CONSTITUTION:An N-type AlxGa1-xAs first clad layer 33, a P-type AlyGa1-yAs active layer 35, a P-type AlxGa1-xAs second clad lower layer 39 and an N-type GaAs layer 40 are shaped onto a substrate 31 in succession through a liquid- phase growth method, etc. A groove 40a, which has internal surfaces, which mutually run parallel and are vertical to a foundation surface, and is etched to a striped shape in predetermined width, is formed so that the N-type GaAs layer 40 is left in prescribed thickness t0 from the surface of the N-type GaAs layer 40 through RIE, etc. The groove 40a is spread up to the second clad lower layer 39 by an unsaturated GaAs melt-back melting liquid, and a residual section in the semiconductor layer 40 functions as a current constriction layer 41. A P-type AlxGa1-xAs is grown and a current constriction channel section 43a and a second clad upper layer 43b are shaped, a P-type GaAs cap layer 45 is formed, and an N side electrode 47 and a P side electrode 49 are shaped.
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