| 摘要 |
PURPOSE:To simultaneously form amorphous semiconductor layers on individual substrates, by opposedly arranging electrode plates for glow discharging to every plural cylindrical substrates respectively, further opposedly arranging conductor conducted to substrate and the other conductor conducted to electrode plate. CONSTITUTION:In a reaction chamber 16 in which synthesis gas for forming a-Si layer is introduced from a gas introducing hole 20, plural cylindrical substates 18 are arranged at a prescribed space through a substrate supporting body 19. Glow discharging electrode plates 17 are opposedly arranged to the sheets 18 respectively. The substrates 18 and the plates 17 are connected to a high frequency source 22 through a matching box 23 to generate glow discharge at a main discharging region 30 between both. In the titled apparatus, the first conductor 28 electrically conducted to the plate 18 and the second conductor 29 conducted to the plate 17 are opposedly arranged and predischarging regions 31 are formed between them. In this way, glow discharging is simultaneously generated at each main discharging region 31 of each substrate 18 through the region 31.
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