| 摘要 |
PURPOSE:To increase the operation margin of a circuit, to which reference potential is inputted, by mounting a screening electrode plate between a resistor and a semiconductor substrate constituting a reference-potential generating circuit. CONSTITUTION:A reference-potential generating circuit 11 is composed of resistors R101-R107, the resistors are formed by a polycrystalline silicon film, and one end is connected to drain power supply Vcc and the other end to source power supply Vss. For reduce the capacitive coupling of the resistors and substrate potential Vsub, screening electrode plates 18(181-183) connected to Vcc and screening electrode plates 19(191-193) connected to Vss are fitted among the resistors and a substrate. Capacitances C101-C106 are interposed among the screening electrode plates 18, 19 and the resistors R101-R107 and capacitances C107-C112 among the screening electrode plates and the substrate. Accordingly, an effect having reference potential VREF is relaxed and stable reference potential VREF can be realized when substrate potential Vsub fluctuates, thus increasing the margin of circuit operation.
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