| 摘要 |
PURPOSE:To form gate metal length with extremely excellent controllability in exceedingly short size by forming a groove on a semiconductor surface, shaping an insulating film on the side wall of the groove and forming a gate metal for an FET or a Schottky metal for a diode in the groove. CONSTITUTION:An insulating film 2 is shaped on a semiconductor substrate 1, source-drain metals 5 are formed, a resist film 3 with a window is shaped on the metals 5, a window is bored to the insulating film 2, and a vertical groove is formed to the semiconductor substrate 1 through RIE, using these film 2 and film 3 as masks. The resist film 3 is removed, the insulating film 2 is shaped on the whole surface, and a semiconductor surface in the bottom of the groove is exposed through etching by RIE. Since the insulating film 2 on the side wall of the groove is made perpendicular to the etching direction at that time, the film thickness of the insulating film 2 is hardly changed. The resist film 3 is formed, a gate metal 4 is evaporated, and a gate is shaped through a lift-off.
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