| 摘要 |
PURPOSE:To improve surface morphology, by interposing buffer layers between a crystal substrate and a compound semiconductor to secure matching of crystal lattice between the crystal substrate and an epitaxial compound semiconductor layer. CONSTITUTION:A first buffer layer 2 having a composition of ZnSxSe1-x(x =0.90-1.0) is formed on the upper surface of an Si substrate 1 by an epitaxial growth method. Next, epitaxial growth is conducted thereon with the ratio between supply amounts of S and Se. varied, so as to form an inclined composi tion layer 3 as a second buffer layer. On the occasion, the uppermost portion 4 of ZnSxSe1-x is made to have a mixed crystal composition (x) which facilitates the matching with the crystal lattice of a desired III-V compound semiconductor of a GaAs or GaP layer or the like to be superposed thereon. In the case when GaAs is superposed, for instance, the composition is set to be x=0 to x=0.1, and in the case of GaP, it is set to be x=0.80-0.89.
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