发明名称 |
Method of making a trench capacitor and dram memory cell |
摘要 |
A method of making a trench capacitor employs an N-type switchable plate formed in a P-type substrate for holding charge at either zero volts or a positive TC voltage and a P-type ground plate that fills in a trench around a memory cell, so that P-type dopant diffuses through a thin oxide insulator to form a channel stop and a pinhold short through the oxide is self-healing by the formation of a reverse-biased P-N diode that cuts off the flow of current through the pinhole.
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申请公布号 |
US4679300(A) |
申请公布日期 |
1987.07.14 |
申请号 |
US19850785195 |
申请日期 |
1985.10.07 |
申请人 |
THOMSON COMPONENTS-MOSTEK CORP. |
发明人 |
CHAN, TSIU C.;HAN, YU-PIN |
分类号 |
H01L27/04;H01L21/265;H01L21/266;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/94;(IPC1-7):H01L27/10 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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