| 摘要 |
PURPOSE:To reduce threshold currents easily, and to obtain a stable mode by forming a bent active layer, shaping current constriction structure by the active layer and a diffusion region and demarcating refractive index waveguide structure on the basis of index difference in the transverse direction. CONSTITUTION:A mesa-striped projection 1a having height of 1-2 micron and width of 1-4 micron is shaped to the upper surface of an N-type GaAs substrate 1 through photolithography and etching. An N-type AlGaAs first optical confinement layer 2, a GaAs active layer 3, a P-type AlGaAs second optical confinement layer 4 and an N-type GaAs protective layer 10 are laminated in succession through an organic metal vapor-phase growth method. An N-type GaAs layer 5 is formed on the protective layer 10 through a liquid-phase epitaxial growth method, and a P-type GaAs electrode layer 6 is laminated and shaped on the layer 5 so that an upper surface thereof is flattened substantially. Zn is diffused near the top of the projecting section at approximately 750 deg.C from an upper section, the diffusion front of Zn is faced oppositely and positioned to the projection 1a in the projecting section of the layer 4, and electrodes 7 and 8 are applied to upper and lower sections.
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