| 摘要 |
PURPOSE:To easily produce a single crystal layer wherein stoichiometric ratio is accurately kept by performing the growth of the single crystal layer in the presence of gaseous chlorine by means of a silicon (Si) molecular beam and a carbon (C) molecular beam. CONSTITUTION:Chlorine is introduced into an ultrahigh vacuum chamber 1 through an introducing pipe 5 for gaseous chlorine and the inside of the chamber 1 is kept in the gaseous chlorine atmosphere of about 5X10<-8>Torr. A single crystal layer of silicon carbide is grown on a base plate 4 for single crystal by heating and evaporating an Si source 9 and a carbon source 10 by means of the E type electron guns 8, 8. On this occasion, the strength of the molecular beams of Si and C is made to a required value by regulating the amount of chlorine to be introduced by means of a variable leak valve 11 provided to the midway part of the introducing pipe 5 and controlling the evaporation velocities of Si and C. The high-quality single crystal is obtained by this method.
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