发明名称 FORMATION OF DEPOSITED FILM
摘要 PURPOSE:To form a deposited film having high quality on a substrate with less energy by bringing gaseous raw materials and gaseous halogen oxidizing agents into reaction with each other in a reaction space to cause a chemical reaction entailing light emission and positioning the substrate in a non-light emitting position. CONSTITUTION:The gaseous raw materials for forming the deposited film and the gaseous halogen oxidizing agents which can oxidize the same are introduced from gas cylinders 101-108 via gas introducing pipes 109-111 having multi-pipe structure into the reaction chamber of a vacuum chamber 120. The above- mentioned gaseous materials and oxidizing agents are brought into chemical contact with each other to induce the chemical reaction to entail the light emission and to form the plural precursors in the activation state. The substrate 118 on a substrate holder 112 is positioned in the non-light emitting region of <=1/5 the max. intension of the emitted light. The deposited film having uniform quality and excellent characteristics is thus formed at a low cost on the substrate 118 with at least one of the above-mentioned precursors as a supply source.
申请公布号 JPS62158875(A) 申请公布日期 1987.07.14
申请号 JP19850298046 申请日期 1985.12.28
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;HANNA JUNICHI;SHIMIZU ISAMU
分类号 H01L31/04;C23C16/24;C23C16/30;C23C16/44;C23C16/452;G03G5/08;H01L21/205 主分类号 H01L31/04
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