| 摘要 |
PURPOSE:To draw a substrate such as a silicon wafer, to which an ion implanta tion is performed, against vacuum suction force in a vacuum processing chamber so as to prevent the deformation and breakage of the substrate, by providing an electrostatic attraction plate on the front surface of a holding plate for the substrate. CONSTITUTION:A holding plate 3 provided with a cooling pipe 4, which holds a substrate 5 such as a silicon wafer, is brought in contact with the opening 2 of a vacuum processing chamber 1 in anion implantation apparatus, thus the ion implantation being performed by the irradiation of ion beams 6. At this time, between the holding plate 3 and the substrate 5, a pair of electrodes 8, 9 are set in interlaced manner so as to provide an electrostatic attraction plate on which a thin insulating film 10 is applied. Then, current is applied to the electrodes 8, 9, thereby the substrate 5 is drawn to the holding plate 3 against vacuum suction force by the electrostatic force. Therefore, the deforma tion and breakage of the substrate 5 due to the difference between an atmo spheric pressure and a vacuum pressure in the processing chamber 1 are prevented and the ion implantation can be accurately performed.
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