发明名称 |
FORMATION OF CRYSTALLINE THIN FILM |
摘要 |
PURPOSE:To improve the electrical characteristics of a crystalline thin film such as the dielectric breakdown voltage characteristics by forming an amorphous film on the surface of a substrate member before the crystalline thin film is formed on the member by vacuum deposition or other method. CONSTITUTION:An amorphous film 9 of SiO2 or the like is formed on the polished surface 6 of a substrate member 2. A metallic film 4 as a lower electrode is formed on the amorphous film 9 by vacuum deposition, sputtering or other method. A crystalline thin film 3 is then formed on the film 4. A metallic film 5 as an upper electrode is further formed on the film 3 to form a piezoelectric element film 1.
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申请公布号 |
JPS62156265(A) |
申请公布日期 |
1987.07.11 |
申请号 |
JP19850295673 |
申请日期 |
1985.12.27 |
申请人 |
JAPAN AVIATION ELECTRONICS IND LTD |
发明人 |
FUNAHASHI HIDEO;NITTA KENJI |
分类号 |
H01L21/20;C23C14/06;C30B23/00;H01L21/203;H01L41/18 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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