发明名称 FORMATION OF CRYSTALLINE THIN FILM
摘要 PURPOSE:To improve the electrical characteristics of a crystalline thin film such as the dielectric breakdown voltage characteristics by forming an amorphous film on the surface of a substrate member before the crystalline thin film is formed on the member by vacuum deposition or other method. CONSTITUTION:An amorphous film 9 of SiO2 or the like is formed on the polished surface 6 of a substrate member 2. A metallic film 4 as a lower electrode is formed on the amorphous film 9 by vacuum deposition, sputtering or other method. A crystalline thin film 3 is then formed on the film 4. A metallic film 5 as an upper electrode is further formed on the film 3 to form a piezoelectric element film 1.
申请公布号 JPS62156265(A) 申请公布日期 1987.07.11
申请号 JP19850295673 申请日期 1985.12.27
申请人 JAPAN AVIATION ELECTRONICS IND LTD 发明人 FUNAHASHI HIDEO;NITTA KENJI
分类号 H01L21/20;C23C14/06;C30B23/00;H01L21/203;H01L41/18 主分类号 H01L21/20
代理机构 代理人
主权项
地址