| 摘要 |
PURPOSE:To stabilize the bonding of glass powders on a semiconductor layer by electrophoresis while improving the yield of titled element by a method wherein the depth of grooves formed to make electrical contact with outer electrode in case of forming a glass film is made shallow not to reach a PN junction. CONSTITUTION:A PN junction to be a diode is formed on a semiconductor wafer 10 and the oxide films 12 are formed on the surface and backside of wafer 10. Next, a throughhole 20 for mesa groove forming the boundary between an element and another element as well as multiple fine grooves 21 are formed on the oxide film 12 by photoetching process. At this time, the width l2 of fine grooves 21 is formed narrower than the width l1 of throughhole 20 for mesa groove to perform mesa etching process as it is i.e. a mesa groove 14 reaching the PN junction 11 is formed simultaneously with the other electrical contact holes 15 not reaching the PN junction 11. Through these procedures, the electric contact can be made with excellent reproducibility to stabilize the bonding of glass powders on the semiconductor layer while improving the yield of semiconductor element.
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