| 摘要 |
PURPOSE:To minimize the usage of gold largely, and to simplify a fixing method while reducing the trouble of the fixation of a semiconductor element by previously attaching gold to the back of the semiconductor element, manufacturing gold silicon eutectic solder only by attached gold and fastening the semiconductor element onto a lead frame. CONSTITUTION:A gold layer 2 is attached to the back of an silicon wafer 1 in approximately 1mum through evaporation or plating. When the gold layer 2 is thinned to 0.8Xm or less, mechanical adhesive strength is weakened. Regarding an silicon element, the back thereof takes an N-type, an alloy in which a trace quantity of antimony is added to gold in order to ensure the ohmic characteristics of the back is used. Pure gold is employed on a P-type silicon element. For manufacture the element, a back gold-attached wafer 3 is stuck to a wafer-stuck tape 4, the element is separated by a dicing cutter, and a back gold-attached silicon element 5 as the element is acquired. The silicon element 5 is placed on a lead frame 7, and heated in an inert gas atmosphere, and the semiconductor element 5 is fixed to the lead frame 7 by gold silicon eutectic solder 6. |
