| 摘要 |
PURPOSE:To reduce the supply of a group V hydride gas, and to obtain an excellent growth layer by separating and mounting a group III organic metal supple system and a group V hydride gas supply system and forming a heating element into a nozzle for the latter. CONSTITUTION:In a vapor growth device such as an InP growth device, only a PH3 gas supply system 5 is separated from other reaction gases and fed in order to suppress growth inhibition by the premature reaction of TEIn (triethylindium) and PH3. A gas supply nozzle 14 made of graphite capable of heating PH3 having extremely inferior decomposition efficiency by high-fre quency heating is used at the nose section of the PH3 gas supply system 5, and induction heating by an infrared ray lamp and a heater 10 may also be employed besides a high-frequency heating coil 13 in the heating system of the PH3 gas supply nozzle 14. Accordingly, a (PH3)/(TEIn) ratio by gas mixing immediately before a substrate and decomposition with high efficiency of PH3 gas by the special nozzle can be decreased, thus allowing the reduction of a risk by the surplus gas and residue of PH3 and growth with high purity of an InP film.
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