| 摘要 |
PURPOSE:To control the electrical capacitance to be small by burying the low- resistance portion covered with an insulating film into the semiconductor substrate, thereby reducing the resistance of the source-drain diffusion layers. CONSTITUTION:A field insulating film 102 and a gate insulating film 103 are formed on a semiconductor substrate 101, and a material which is to become a gate electrode 104 is grown on the gate insulating film 103 and is selectively applied with pattern formation. Then, with the gate electrode 104 as a mask a low-concentration impurity of the conductivity type reverse to the substrate is ion-implanted, forming source-drain 105, 106 on the substrate which are shallow junctions. Then, with a photo resist 107 as a mask the gate insulating film 103 is removed first, and next, with this photo resist 107 and the field insulating film 102 as a mask grooves 108, 109 are formed from the substrate surface of part of the source-drain regions into the semiconductor substrate 101, deeper than the diffusion layers 105, 106. Then, after removing the photo resist 107, an insulating film 110 is formed, and the grooves 108, 109 are filled with conductor materials 111, 112.
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