| 摘要 |
PURPOSE:To enable growth of beta-Si at a low temperature of 1,000 deg.C without using a buffer layer by employing the mixing gas of trichlor-silane, lower hydrocarbon and hydrogen and growing beta-SiC in the vapor phase on an silicon 111 substrate displaced in the specific direction under the specific conditions of decompression. CONSTITUTION:A reaction furnace such as an induction heating type reaction furnace is used as a growth device, an exhaust system is connected to the reaction furnace, and the mixing gas of trichlor-silane (SiHCl3), propane (C3H8) and hydrogen (H2) is introduced from a gas introducing port. Pressure in the furnace is controlled under the specific condition of decompression of 1,000Pa or less such as 200Pa. A substrate having a 111 crystal face and displaced at 1-6 deg. in the specific direction <2-1-1> direction is employed as an silicon- wafer used. When the silicon substrate is heated at approximately 1,000 deg.C and grown in the vapor phase by said device, beta-SiC can be grown at speed of approximately 250-450Angstrom /min. Lower hydrocarbon gas, such as methane (CH4), acetylene (C2H2), etc. can be employed besides said substance as hydrocarbon.
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