| 摘要 |
PURPOSE:To make it possible to improve input protecting withstanding voltage, by burying a hole part, which is formed in a first insulating film that is provided on a second conductivity type semiconductor region, forming a first conductor layer including impurities having the same conductivity type as the semiconductor region, burying a hole part formed in a second insulating film that is provided on the first conductor layer, and forming a second conductor layer. CONSTITUTION:A second conductivity type semiconductor region 16 is provided in the surface region of a first conductivity type semiconductor substrate 10. A part of the surface of said semiconductor region 16 is exposed in a hole part 19, which is provided in a first insulating film 18. The hole part 19, which is provided in a first insulating film 18. The hole part 19 is buried. A first conductor layer 20, which includes impurities having the same conductivity as the semiconductor region 16, is provided so as to contact with the semiconductor region 16. A part of the surface of the conductor layer 20 is exposed in a hole part 22, which is provided in a second insulating film 22. The hole part 22 is buried. A second layer 27 is contacted with the surface of the conductor layer 20. For example, on the N<+> type diffused region 16, the insulating film 18 and the polycrystalline silicon layer 20 including N-type impurities are formed. Then the insulating film 21 and the metal wiring 27 comprising aluminum are formed thereon. |
