| 摘要 |
PURPOSE:To obtain an integrated circuit substrate which has excellent electric insulation and thermal conductivity by forming many through holes in the platelike substrate made of metal or ceramics, burying the through holes, and forming a diamond layer for covering the surface of the substrate. CONSTITUTION:Many through holes 1a which pass a platelike substrate 1 made of silicon carbide are formed in the substrate 1, the substrate 1 is covered entirely with a diamond layer 2, and the layer 2 is buried in the holes 1a. To form the substrate 1, a silica film 3 is formed on an SiC plate 1', the plate 1' is coated with a resist 4, the pattern of the holes 1a is exposed and developed. The film 3 exposed in punched holes 4a is then etched with hydrogen fluoride solution to separate and remove the resist 4. The holes 1a are formed in the plate 1' by alkali etching or dry etching in this state, and the film 3 is again removed with the hydrogen fluoride solution. To form the layer 2 on the substrate 1 manufactured in this manner, a diamond is precipitated by a microwave plasma CVD device. |
