| 摘要 |
PURPOSE:To obtain a surface light emitting diode with high fiber coupled optical output by causing a dielectric layer to include two or more layers in different defraction indices and setting thickness of each dielectric layer to the value corresponding to almost 1/4 wavelength of the light corresponding to the band gap of active layer in each dielectric layer. CONSTITUTION:An n-type InP layer 2, a InGaAsP active layer 3, p-type InP layer 4, a p-type InGaAsP layer 5 are sequentially formed on an n-type InP substrate 1. Next, a circular mask is formed, etching is carried out and thereby a semicircular MESA type semiconductor layer is formed. After a metal to become a p-type contact 7 is vacuum-deposited, the p-type contact 7 is removed only from the circular part in diameter of 5mumphi from the center of upper part of circular MESA layer and a dielectric layer 8 is formed therein. This dielectric layer 8 is sequentially formed by SiO2 film, amorphous Si film, SiO2 film, amorphous Si film and thickness of SiO2 film should be 2,200Angstrom , while thickness of amorphous Si film should be 810Angstrom . After the n-side contact 9 is formed, a window 10 extract the light is formed to the part opposed to the dielectric layer 8. |
