| 摘要 |
PURPOSE:To improve electrical connectivity of the external electrodes and external leads of a semiconductor chip, by providing a plurality of through holes in the external electrodes, which are arranged on an insulating film on a semiconductor substrate. CONSTITUTION:External electrodes 14 are arranged on an insulating film 12 on a semiconductor substrate 1. A plurality of through holes 15 are provided from the upper surface to the back surface in said external electrodes 14. For example, an MISFET is formed on the semiconductor substrate 1 comprising single crystal silicon. Probe checking pads 8P are arranged on a field insulating film 2 at the peripheral part of the substrate 1. A polyimide resin is applied thereon, and the insulating film 12 is provided. The bonding pads 14 are arranged on the specified positions of the film 12. A plurality of the through holes, which penetrate from the upper surface to the back surface, are provided in each bonding pad 14. The through holes 15 has a rectangular shape, which is straightly extended from the end part on the side of a contact hole of the bonding pad 14 to the end part on the opposite side of the connecting hole 13. This is an example of the pttern of the hole 15. |
