| 摘要 |
PURPOSE:To perform an anisotropical etching process with high dimensional precision while preventing so called side etching by free radicals by a method wherein etching gas containing at least one constituent at marginal potential is led in a vacuum processing chamber of a dryetching device while said chamber is impressed with DC bias lower than the marginal potential of at least one constituent. CONSTITUTION:Within a vacuum processing chamber of a dryetching device provided with an independently controllable plasma producing means and a DC bias impressing means, the dryetching process is performed by leading etching gas containing at least one constituent at marginal potential meeting specified plasma producing requirements in the processing chamber as well as by impressing said chamber with DC bias at lower value than the marginal potential of at least one constituent. Through these procedures, a constituent at higher marginal potential than the DC bias to be impressed can be deposited to form a protective film simultaneously enabling the etching process to be performed using a constituent at marginal potential lower than said DC bias in other words not to be deposited so that the dryetching process may be performed using accelerated ion while protecting the vertical sides to the formed by etching process by said protective film.
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