| 摘要 |
PURPOSE:To eliminate voids in aluminum wirings and pinholes in a passivation film by lowering the annealing temperature of the passivation film than the heat treating temperature of the aluminum. CONSTITUTION:After a predetermined Locos oxide film, a gate oxide film, a polysilicon gate, and a source.drain diffused layer are formed and processed on a silicon substrate 1, an interlayer insulating film made of a PSG film 2 for covering them is formed, and aluminum wirings 3 are then formed. Then, an aluminum sintering is executed at 420 deg.C for 30min in N2 and H2 mixture gas atmosphere, a PSG film 4 having 0.5mum of thickness is deposited and a plasma silicon nitride film 5 having 0.5mum of thickness is sequentially deposited thereon to form a passivation film. After a wire bonding pad is opened, the film 5 is annealed at 380 deg.C in N2 and H2 mixture gas atmosphere to complete an MOS type semiconductor device.
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