| 摘要 |
PURPOSE:To form a thin film having uniform thickness on a semiconductor wafer and to reduce the adherence of reactive substance to a wall by injecting second reaction gas which does not form a solid phase by a thermal decomposition together with inert gas through a partition plate above a susceptor. CONSTITUTION:A semiconductor wafer 22 is placed on a susceptor 23, monosilane gas and helium gas as carrier gas are mixed and supplied through a first gas supply port 20 while heating by an infrared ray lamp 30, and oxygen gas and inert gas are fed from a second gas supply port 28. A partition plate 25 disturbs the adherence of reactive substance on the inner wall of a monosilane reaction chamber to form a solid phase by inert gas injected from many flowing holes and thermal decomposition by oxygen gas which does not form a solid phase by thermal decomposition or the reaction with the oxygen gas. Since the oxygen gas is injected from the many holes of the plate 25 on the susceptor 23, the oxygen gas can be supplied uniformly on the wafer 22. Thus, a thin film having uniform thickness with less irregularity of the thickness of the vapor-phase grown film is obtained.
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