| 摘要 |
PURPOSE:To form patterns having a tapered side surface by performing a reproducible etching by a method wherein mask patterns are coated on a coat to be processed in multilayers, sidewalls on the coat to be processed are formed in a stepped form and an anisotropical etching is performed on the coat to be processed. CONSTITUTION:An insulating film (SiO2 film) 2 is deposited on a semiconductor substrate (Si) 1, mask patterns 3, 4 and 5 are coated in multilayers and the insulating film 2 is anisotropically etched by a dry etching method wherein plasma is utilized. At this time, in the mask pattern 3, for example, as the part not being covered with the upper mask pattern 4 is etched, the surface of the insulating film 2 is exposed and etched and the etched surface is turned into stepped processed surfaces at the time of etching end. The mask patterns 3-5 are removed with an organic solvent or the likes after the etching and a heat treatment is applied, whereby the steppe parts become smooth and the processed surfaces are formed into a tapered form.
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