| 摘要 |
PURPOSE:To form a preferable vapor-phase grown film having uniform thickness by dividing an infrared ray transmitting member for transmitting light emitted from an infrared ray lamp into a plurality, and disposing the divided members to reduce the individual members even if the diameter of a semiconductor wafer is increased so that an apparatus is increased in size. CONSTITUTION:An infrared rays are emitted from an infrared ray lamp 6 through a transparent quartz plate 7 to a susceptor 5 and a semiconductor wafer 4. The wafer 4 is heated directly by the infrared rays or by the heat transmitted from the susceptor 5 heated by the infrared rays. Here, two plates 7 are disposed while avoiding the center of the wafer 4. Since a partition bridge 1b between holes 1a and a partition bridge 1a of a retaining frame 9 become an infrared ray emission limiter to the center of the wafer 4 therebetween, the infrared rays are emitted more to both ends near an outlet 2 and an inlet 3. Since the susceptor 5 is rotated during reaction, it is uniformized circumferentially so that the portion near the center is eventually hardly irradiated with the infrared rays.
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