| 摘要 |
PURPOSE:To eliminate cross talk between blocks on one chip and to obtain an IC structure, which is operated at a high frequency and has high performance,by forming the width of an isolating region, by which the blocks are isolated, so that the width is far larger than the width of an isolating region, by which elements are isolated. CONSTITUTION:On one semiconductor chip, a block A, which comprises an element group forming one circuit, and another block B comprising an element groups forming another circuit are located. In this semiconductor integrated circuit device, a width D of an isolating region, by which the blocks A and B are electrically isolated, is made far larger than a width (d) of an isolating region, by which elements in the blocks A and B are isolated. For example, the D is about D=50-100mum, which is ten and several times the width d=3-5mum. At this time, an element isolating groove 4 and a wide groove 6 between the blocks are formed by the same etching processes. An element isolating (p) layer 5 and a block isolating (p) layer 7 utilizing a P-N junction are provided by the same diffusion process.
|
